microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B 110 watts, 32 volts pulsed avionics 1030 to 1090 mhz ldmos fet general description the 1011LD110B is a common source n-channel enhance ment mode lateral mosfet capable of providing 110w pk of rf power from 1030mhz to 1090 mhz. the device is nitride passivated and utilizes gold metallization to ensure highest mttf. the transistor includes input and output prem atch for broadband capability. low thermal resistance package reduces junction tem perature, extends life. integrated esd protection makes the device robust. case outline 55qt (common source) absolute maximum ratings voltage and current drain-source (v dss ) +65v gate-source (v gs, v ds =0) +20v temperatures storage temperature -65 to +150 c operating case temperature 1 +100 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units bv dss drain-source breakdown v gs = 0v, i d = 2ma 65 v i dssf drain-source leakage current v ds = 32v, v gs = 0v 5 a i gssf gate-source leakage current v gs = 10v, v ds = 0v 2 a v gs(th) gate threshold voltage v ds = 10v, i d = 3ma 2 4 v v ds(on) drain-source on voltage v gs = 10v, i d = 1a 0.25 v g fs forward transconductance v ds = 10v, i d = 1a 2.2 s jc 1 thermal resistance 0.12 oc/w functional characteristics @ 25 c, vds = 32v, i dq = 250ma g ps common source power gain pulse width = 32 s, ltdc=2%, 13.5 14.5 db pd pulse droop f=1030/1090 mhz, p out = 110w 0.5 db p 1db output power at 1db gain compression pulse width = 32 s, ltdc=2%, f=1030/1090 mhz 110 w d drain efficiency f = 1030 mhz, p out = 110w 45 50 % load mismatch f = 1090 mhz, p out = 110w 5:1 notes: 1. at rated output power and pulse condition s 2. pulse format 1: 32s, 2% long term duty factor 3. pulsed bias: i dq-pulsed = 6.5ma (@ 42us on, 1.6msec) rev. 0 C apr. 2007 downloaded from: http:///
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B typical performance (1030mhz ~ 1090mhz) 1011LD110B input/output 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 input pow e r (w ) ouput p ower (w) 1030mhz 1060mhz 1090mhz 1011LD110B ga in 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 output pow e r (w ) gain (db) 1030mhz 1060mhz 1090mhz 1011LD110B input return loss -25.00 -20.00 -15.00 -10.00 -5.00 0.00 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 output pow er (w ) input return loss (db) 1030mhz 1060mhz 1090mhz 1011LD110B efficie ncy 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 70.0% 80.0% 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 output pow e r (w ) e ffi. (% ) 1030mhz 1060mhz 1090mhz downloaded from: http:///
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B 1011LD110B test circuit layout 1011LD110B test circuit component designations and values part description part description c01, c04, c05, c06 43pf chip capacitor (atc 100a) c10, c14, c15 0.033uf chip capacitor c07, c08 100pf chip capacitor (atc 100a) c11 1uf 16 v tantalum capacitor c02, c03 7.5pf chip capacitor (atc 100a) c12 47uf 6 3v electrolytic capacitor c18, c19 4.7pf chip capacitor (atc 100a) c16 470uf, 63v electrolytic capacitor c20 .35-3.5pf johanson capacitor, jmc5801 c17 1000uf, 63v electrolytic capacitor c09, c13 1000pf chip capacitor l01 6 turns, 24 awg, idia 0.092 x01 adg419, analog device r01, r04 15 , 1/4w chip resistor r02, r03 200 , 1/4w chip resistor r05 82.5 , 1/4w chip resistor m01 36 x 295 mils (w x l) m02 36 x 513 mils (w x l) m03 680 x 80 mils (w x l) m04 36 x 460 mils (w x l) m05 420 x 375 mils (w x l) m06 480 x 608 mils (w x l) m07 200 x 10 mils (w x l) m08 200 x 10 mils (w x l) m09 1034 x 674 mils (w x l) m10 454 x 348 mils (w x l) m11 220 x 100 mils (w x l) m12 80 x 452 mils (w x l ) m13 220 x 35 mils (w x l) m14 445 x 186 mils (w x l ) m15 80 x 125 mils (w x l) m16 36 x 125 mils (w x l) m17 36 x 286 mils (w x l) pcb rogers rt6006, r =6.15, 25mils, 1oz downloaded from: http:///
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B typical impedance values timing diagram for pulsed bias 5us 5us 32us 42us 1.6ms dc rf dut z s z l frequency (mhz) z s ( ) z l ( ) 1030 0.88 - j1.21 1.95 - j1.59 1060 0.80 - j1.05 1.68 - j1.50 1090 0.73 - j0.88 1.43 - j1.34 * v ds = 32v, i dq = 250ma, p out = 110w * pulse format: 32s, 2% long term duty factor input matching network output matching network downloaded from: http:///
microsemi reserves the right to change, without not ice, the specifications and information contained h erein. visit our web site at www.microsemi.com or contact our factory direct. 1011LD110B downloaded from: http:///
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